Detailed Product Description

Features: 
1) C712 power thyristor fusion
2) All-diffused structure
3) Interdigitated amplifying gate configuration
4) VTM<1.9V at 125oC, 1,000A
5) High DV/DT capability; blocking capability up to 2,000V 
6) Pressure assembled device 
7) For inverter and chopper applications 

Specifications at 125oC:
1) Tq = 40us  
2) DI/DT = 25A/us
3) ITM = 500A  
4) VR = 50V
5) DV/DT = 1,000V/us 
6) VD = 1,440V